IRF7313TRPBF International Rectifier, IRF7313TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7313TRPBF
• Description: MOSFET 2N-CH 30V 6.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7313TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.029Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 6.5A
• Power Dissipation: 2W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 46 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7313PBFTR

100
100
10
10
1
1
3.0
0.1
TOP
BOTTOM 3.0V
V
V
T = 25°C
GS
DS
VGS
10V
7.0V
5.5V
4.5V
4.0V
3.5V
15V
J
3.5
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 150°C
J
4.0
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
= 10V
3.0V
4.5
5.0
10
A
A
100
100
10
10
1
1
0.4
0.1
TOP
BOTTOM 3.0V
V
0.6
V
SD
DS
VGS
10V
7.0V
5.5V
4.5V
4.0V
3.5V
15V
T = 150°C
, Source-to-Drain Voltage (V)
J
, Drain-to-Source Voltage (V)
0.8
1.0
1
T = 25°C
J
20µs PULSE WIDTH
T = 150°C
J
1.2
3.0V
V
1.4
GS
= 0V
1.6
10
A
A