SI5519DU-T1-GE3 Vishay, SI5519DU-T1-GE3 Datasheet
SI5519DU-T1-GE3
Specifications of SI5519DU-T1-GE3
Related parts for SI5519DU-T1-GE3
SI5519DU-T1-GE3 Summary of contents
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... Bottom View Ordering Information: Si5519DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...
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... Si5519DU Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... GEN ° 3 2 N-Channel 3.1 A, dI/dt = 100 A/µ P-Channel 2.2 A, dI/ 100 A/µ Si5519DU Vishay Siliconix a Min. Typ. Max. N-Ch 5.5 8.25 P-Ch 4.5 6.8 N- Ω P-Ch 11 16.5 N- P- Ω N- P-Ch 8.5 12.8 N-Ch 8.6 P-Ch - 8.6 N-Ch 25 ...
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... Si5519DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 3 Drain-to-Source Voltage (V) DS Output Characteristics 0.20 0. 0.08 V 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 6 Total Gate Charge (nC) g Gate Charge www.vishay.com 2 4 3.0 2.5 2.0 1 ...
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... Limited by R DS(on 0.1 BVDSS Limited 0. °C A Single Pulse 0.001 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si5519DU Vishay Siliconix T = 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 5 0 0.001 0.01 0 Time (s) Single Pulse Power 10 ms 100 ms ...
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... Si5519DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 74406 S-81449-Rev. B, 23-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse 0.01 0.001 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5519DU Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA (t) 3 ...
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... Si5519DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Drain-to-Source Voltage (V) DS Output Characteristics 0.20 0. 0.08 V 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 5 Total Gate Charge (nC) g Gate Charge www.vishay.com thru 2.0 1.5 1 125 ° ...
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... Limited by R DS(on 0.1 BVDSS Limited 0. °C A Single Pulse 0.001 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si5519DU Vishay Siliconix T = 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0 Time (s) Single Pulse Power ...
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... Si5519DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 9 Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 74406 S-81449-Rev. B, 23-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse 0.001 0.01 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5519DU Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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