SI6963BDQ-T1-GE3 Vishay, SI6963BDQ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI6963BDQ-T1-GE3
• Description: MOSFET DL P-CH 20V 3.9A 8-TSSOP
• Manufacturer: Vishay

Specifications of SI6963BDQ-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -3.9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6963BDQ-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72772
S-81221-Rev. B, 02-Jun-08
0.15
0.12
0.09
0.06
0.03
0.00
10.0
8.0
6.0
4.0
2.0
0.0
30
10
1
0.0
0.0
0.0
V
I
D
DS
= 3.9 A
Source-Drain Diode Forward Voltage
= 10 V
V
3.0
On-Resistance vs. Drain Current
GS
4.0
0.3
V
= 2.5 V
SD
Q
T
- Source-to-Drain Voltage (V)
g
J
I
6.0
D
- Total Gate Charge (nC)
= 150 °C
- Drain Current (A)
8.0
Gate Charge
0.6
9.0
12.0
0.9
V
12.0
GS
T
J
= 4.5 V
= 25 °C
16.0
1.2
15.0
20.0
18.0
1.5
1200.0
1000.0
800.0
600.0
400.0
200.0
0.10
0.08
0.06
0.04
0.02
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0.0
- 50
0.0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
C
= 3.9 A
1
rss
= 10 V
4.0
T
V
V
0
J
2
GS
DS
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
oss
25
Capacitance
8.0
3
I
D
50
C
= 3.9 A
4
Vishay Siliconix
iss
Si6963BDQ
12.0
75
5
100
www.vishay.com
6
16.0
125
7
20.0
150
8
3