SE2470-001 Honeywell Sensing and Control, SE2470-001 Datasheet
SE2470-001
Specifications of SE2470-001
Related parts for SE2470-001
SE2470-001 Summary of contents
Page 1
... Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington DESCRIPTION The SE2470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current ...
Page 2
... SE2470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡ ...
Page 3
... SE2470 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 ...
Page 4
... SE2470 AlGaAs Infrared Emitting Diode Fig. 7 Normalized Power Output vs Temperature 2.0 1.8 1.6 1 -50 -25 0 +25 +50 +75 +100 +125 T - Ambient temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. ...