SI4834BDY-T1-E3 Vishay, SI4834BDY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4834BDY-T1-E3
• Description: MOSFET DUAL N-CH 30V 5.7A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4834BDY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4834BDY-T1-E3TR

Si4834BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72064.
www.vishay.com
6
0.0001
0.001
0.01
0.1
20
10
1
0
Reverse Current vs. Junction Temperature
25
30 V
50
T
J
- Temperature (°C)
75
24 V
100
200
160
120
80
40
0
0
125
6
150
V
DS
C
oss
- Drain-to-Source Voltage (V)
Capacitance
12
18
10
1
0.0
24
0.3
T
J
30
= 150 °C
V
F
Forward Voltage Drop
- Forward Voltage Drop (V)
0.6
S09-0869-Rev. D, 18-May-09
T
J
Document Number: 72064
= 25 °C
0.9
1.2
1.5