SI7945DP-T1-GE3 Vishay, SI7945DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7945DP-T1-GE3
• Description: MOSFET DL P-CH 30V PPAK 8-SOIC
• Manufacturer: Vishay

Specifications of SI7945DP-T1-GE3

• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: 20V
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8 Dual
• Module Configuration: Dual
• Power Dissipation: RoHS Compliant
• Continuous Drain Current Id: 10.9A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7945DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72090
S09-0227-Rev. D, 09-Feb-09
0.05
0.04
0.03
0.02
0.01
0.00
30
10
10
1
8
6
4
2
0
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
0.2
On-Resistance vs. Drain Current
= 10.9 A
10
= 15 V
6
V
SD
Q
- Source-to-Drain Voltage (V)
I
g
0.4
D
- Total Gate Charge (nC)
Gate Charge
T
- Drain Current (A)
12
20
J
= 150 °C
0.6
18
30
0.8
V
V
GS
GS
T
= 4.5 V
J
24
= 10 V
40
= 25 °C
1.0
1.2
30
50
3500
3000
2500
2000
1500
1000
0.05
0.04
0.03
0.02
0.01
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
C
GS
= 10.9 A
rss
= 10 V
6
2
T
V
V
0
J
DS
GS
- Junction T emperature ( °C)
C
oss
- Gate-to-Source V oltage (V)
- Drain-to-Source Voltage (V)
2 5
Capacitance
12
4
I
D
5 0
Vishay Siliconix
= 10.9 A
C
iss
18
6
7 5
Si7945DP
www.vishay.com
100
24
8
125
150
30
10
3