SI1912EDH-T1-E3 Vishay, SI1912EDH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1912EDH-T1-E3
• Description: MOSFET N-CH DUAL 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1912EDH-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.13A
• Vgs(th) (max) @ Id: 450mV @ 100µA
• Gate Charge (qg) @ Vgs: 1nC @ 4.5V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.28 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.13 A
• Power Dissipation: 0.74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.28A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 450mV
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1912EDH-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71408
S10-1054-Rev. B, 03-May-10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.0
0.0
0
V
I
D
DS
V
= 1.13 A
GS
On-Resistance vs. Drain Current
= 10 V
0.3
= 1.8 V
V
V
GS
0.5
1
DS
Output Characteristics
Q
= 5 V thru 2 V
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
0.6
1.0
2
0.9
1.5
V
V
3
GS
GS
1.2
= 2.5 V
= 4.5 V
1.5 V
1 V
2.0
1.5
4
140
120
100
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.5
1.0
0.5
0.0
80
60
40
20
0
- 50
0.0
0
C
rss
V
I
On-Resistance vs. Junction Temperature
D
- 25
GS
= 1.13 A
= 4.5 V
4
V
V
0.5
DS
0
T
Transfer Characteristics
C
GS
J
oss
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
iss
25
Capacitance
8
1.0
50
Vishay Siliconix
T
Si1912EDH
12
25 °C
C
75
= - 55 °C
100
www.vishay.com
1.5
16
125
125 °C
150
2.0
20
3