SI1912EDH-T1-E3 Vishay, SI1912EDH-T1-E3 Datasheet - Page 3
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SI1912EDH-T1-E3
Manufacturer Part Number
SI1912EDH-T1-E3
Description
MOSFET N-CH DUAL 20V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI1912EDH-T1-E3.pdf
(6 pages)
Specifications of SI1912EDH-T1-E3
Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
280 mOhm @ 1.13A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.13A
Vgs(th) (max) @ Id
450mV @ 100µA
Gate Charge (qg) @ Vgs
1nC @ 4.5V
Power - Max
570mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.28 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.13 A
Power Dissipation
0.74 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.28A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
450mV
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1912EDH-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1912EDH-T1-E3
Manufacturer:
VISHY
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71408
S10-1054-Rev. B, 03-May-10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.0
0.0
0
V
I
D
DS
V
= 1.13 A
GS
On-Resistance vs. Drain Current
= 10 V
0.3
= 1.8 V
V
V
GS
0.5
1
DS
Output Characteristics
Q
= 5 V thru 2 V
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
0.6
1.0
2
0.9
1.5
V
V
3
GS
GS
1.2
= 2.5 V
= 4.5 V
1.5 V
1 V
2.0
1.5
4
140
120
100
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.5
1.0
0.5
0.0
80
60
40
20
0
- 50
0.0
0
C
rss
V
I
On-Resistance vs. Junction Temperature
D
- 25
GS
= 1.13 A
= 4.5 V
4
V
V
0.5
DS
0
T
Transfer Characteristics
C
GS
J
oss
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
iss
25
Capacitance
8
1.0
50
Vishay Siliconix
T
Si1912EDH
12
25 °C
C
75
= - 55 °C
100
www.vishay.com
1.5
16
125
125 °C
150
2.0
20
3