SI4501ADY-T1-E3 Vishay, SI4501ADY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4501ADY-T1-E3
• Description: MOSFET N/P-CH HALF BRG 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4501ADY-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V, 8V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 4.1A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Common Quad Drain
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V @ N Channel or 8 V @ P Channel
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 6.3 A @ N Channel or 4.1 A @ P Channel
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 20V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4501ADY-T1-E3TR

Si4501ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.0
100
0.4
0.2
10
1
- 50
0.00
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
Threshold Voltage
T
I
D
= 150 °C
J
0.4
= 250 µA
- Temperature (°C)
25
50
0.6
75
0.8
0.01
100
0.1
10
100
1
0.1
T
by r
J
Limited
= 25 °C
1.0
DS(on)
125
Single Pulse
T
A
V
= 25 °C
150
1.2
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
1
10
0.10
0.08
0.06
0.04
0.02
0.00
100
80
60
40
20
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 mS
10 mS
100 mS
1 S
10 S
dc
V
2
100
GS
0.01
- Gate-to-Source Voltage (V)
I
D
Time (sec)
4
= 8.8 A
0.1
S-61005-Rev. B, 12-Jun-06
Document Number: 71922
6
1
8
10
10