SI4943BDY-T1-E3 Vishay, SI4943BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4943BDY-T1-E3
• Description: MOSFET P-CH DUAL 20V 6.3A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4943BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -8.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4943BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73073
S09-0704-Rev. C, 27-Apr-09
0.06
0.05
0.04
0.03
0.02
0.01
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
V
D
DS
GS
Source-Drain Diode Forward Voltage
= 8.4 A
0.2
On-Resistance vs. Drain Current
= 10 V
5
5
= 4.5 V
V
SD
Q
0.4
g
-
T
10
10
I
- Total Gate Charge (nC)
J
Source-to-Drain V
D
= 150 °C
- Drain Current (A)
Gate Charge
0.6
15
15
0.8
oltage (V)
20
20
T
J
1.0
= 25 °C
V
GS
= 10 V
25
25
1.2
30
30
1.4
2100
1800
1500
1200
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
- 25
D
GS
= 8.4 A
= 10 V
2
4
V
V
DS
GS
0
T
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
Capacitance
8
4
C
C
50
oss
Vishay Siliconix
iss
I
D
= 8.4 A
Si4943BDY
12
6
75
www.vishay.com
100
16
8
125
150
20
10
3