SI1902DL-T1-E3 Vishay, SI1902DL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1902DL-T1-E3
• Description: MOSFET N-CH DUAL 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI1902DL-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 660mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.385 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.66 A
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.385Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-70
• Module Configuration: Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1902DL-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71080
S09-2683-Rev. I, 14-Dec-09
0.1
1.0
0.8
0.6
0.4
0.2
0.0
5
4
3
2
1
0
1
0.0
0.0
0
V
I
D
DS
Surge-Drain Diode Forward Voltage
= 0.66 A
0.2
On-Resistance vs. Drain Current
= 10 V
0.2
V
0.2
SD
Q
g
- Source-to-Drain Voltage (V)
V
T
0.4
GS
- Total Gate Charge (nC)
J
I
D
= 150 °C
Gate Charge
= 2.5 V
- Drain Current (A)
0.4
0.6
0.4
0.6
0.8
T
V
J
0.6
GS
= 25 °C
0.8
= 4.5 V
1.0
1.2
0.8
1.0
100
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
rss
D
GS
= 0.66 A
= 4.5 V
1
4
V
V
DS
GS
0
T
C
J
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
- Junction Temperature (°C)
iss
25
Capacitance
2
8
50
Vishay Siliconix
I
D
= 0.66 A
12
3
75
Si1902DL
www.vishay.com
100
16
4
125
150
20
5
3