SI6544BDQ-T1-E3 Vishay, SI6544BDQ-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI6544BDQ-T1-E3
• Description: MOSFET N/P-CH 30V 8-TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6544BDQ-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A, 3.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Source
• Resistance Drain-source Rds (on): 0.032 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.7 A @ N Channel or 3.8 A @ P Channel
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI6544BDQ-T1-E3TR

Si6544BDQ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.1
20
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
T
J
0.3
= 150 °C
V
SD
0
T
- Source-to-Drain Voltage (V)
Threshold Voltage
J
25
- Temperature (°C)
0.6
I
D
50
= 250 µA
0.9
75
T
J
= 25 °C
0.01
100
100
0.1
10
1
0.1
1.2
Limited by R
* V
125
Safe Operating Area, Junction-to-Case
GS
> minimum V
150
1.5
V
DS
Single Pulse
DS(on)
T
- Drain-to-Source Voltage (V)
C
1
= 25 °C
*
GS
at which R
10
DS(on)
0.15
0.12
0.09
0.06
0.03
0.00
200
160
120
80
40
0
10
0
is specified
-3
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
10
V
GS
-2
- Gate-to-Source Voltage (V)
4
I
Time (s)
D
S-81056-Rev. B, 12-May-08
10
= 4.3 A
Document Number: 72244
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6
1
8
10
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