SI6544BDQ-T1-GE3 Vishay, SI6544BDQ-T1-GE3 Datasheet - Page 7
![MOSFET N/P-CH 30V 8-TSSOP](/photos/5/42/54235/pkg_5844_sml.jpg)
SI6544BDQ-T1-GE3
Manufacturer Part Number
SI6544BDQ-T1-GE3
Description
MOSFET N/P-CH 30V 8-TSSOP
Manufacturer
Vishay
Datasheet
1.SI6544BDQ-T1-E3.pdf
(9 pages)
Specifications of SI6544BDQ-T1-GE3
Package / Case
8-TSSOP
Mounting Type
Surface Mount
Power - Max
830mW
Fet Type
N and P-Channel
Gate Charge (qg) @ Vgs
15nC @ 10V
Vgs(th) (max) @ Id
3V @ 250µA
Current - Continuous Drain (id) @ 25° C
3.7A, 3.8A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
43 mOhm @ 3.8A, 10V
Transistor Polarity
N And P Channel
Continuous Drain Current Id
2.7A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
25mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72244
S-81056-Rev. B, 12-May-08
- 0.2
- 0.4
0.1
0.6
0.4
0.2
0.0
20
10
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
T
J
0.3
= 150 °C
V
I
D
SD
0
= 250 µA
T
- Source-to-Drain Voltage (V)
Threshold Voltage
J
- Temperature (°C)
25
0.6
50
0.9
T
75
J
= 25 °C
0.01
100
0.1
10
100
1
0.1
1.2
Limited by R
Safe Operating Area, Junction-to-Case
* V
125
GS
> minimum V
150
1.5
V
DS
Single Pulse
DS(on)
T
C
- Drain-to-Source Voltage (V)
1
= 25 °C
*
GS
at which R
10
0.20
0.16
0.12
0.08
0.04
0.00
200
160
120
DS(on)
80
40
0
10
0
-3
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
10
100
GS
-2
- Gate-to-Source Voltage (V)
4
Time (s)
I
D
10
= 3.8 A
Vishay Siliconix
-1
Si6544BDQ
6
www.vishay.com
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