SI5903DC-T1-E3 Vishay, SI5903DC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5903DC-T1-E3
• Description: MOSFET DUAL P-CH 20V 2.1A 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5903DC-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.155 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 260mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5903DC-T1-E3TR

Si5903DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71054.
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.01
0.1
0.1
2
1
2
1
10
10
-4
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Single Pulse
Threshold Voltage
T
J
25
- Temperature (
Single Pulse
10
-3
50
10
I
D
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Foot
°C)
100
10
-2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
50
40
30
20
10
10
1
0
10
-1
-4
10
-3
10
10
-2
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
10
- - T
Time (s)
-1
t
1
1
A
S10-0547-Rev. C, 08-Mar-10
= P
t
2
Document Number: 71054
DM
1
Z
thJA
100
thJA
t
t
1
2
(t)
= 90 °C/W
10
100
600
10
600