SI4944DY-T1-E3 Vishay, SI4944DY-T1-E3 Datasheet

MOSFET N-CH DUAL 30V 9.3A 8-SOIC

SI4944DY-T1-E3

Manufacturer Part Number
SI4944DY-T1-E3
Description
MOSFET N-CH DUAL 30V 9.3A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4944DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.5 mOhm @ 12.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.0095 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.3 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
12.2A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4944DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4944DY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
27 496
Part Number:
SI4944DY-T1-E3
Manufacturer:
VISHAY
Quantity:
317
Part Number:
SI4944DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 969
Part Number:
SI4944DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72512
S-82284-Rev. B, 22-Sep-08
Ordering Information: Si4944DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
G
G
(V)
S
S
1
1
2
2
1
2
3
4
Top View
Si4944DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
SO-8
0.0095 at V
0.016 at V
R
DS(on)
J
a
= 150 °C)
a
Dual N-Channel 30-V (D-S) MOSFET
GS
8
7
6
5
GS
(Ω)
= 4.5 V
= 10 V
D
D
D
D
1
1
2
2
a
a
A
= 25 °C, unless otherwise noted
I
D
12.2
Steady State
Steady State
9.4
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• 100 % R
• DC/DC Conversion
• Load Switching
Symbol
Symbol
T
R
R
J
V
V
G
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
1
D
stg
N-Channel MOSFET
g
Tested
®
D
S
1
1
Power MOSFET
Typical
10 s
12.2
8.8
1.9
2.3
1.2
42
75
19
- 55 to 150
± 20
30
30
G
Steady State
2
Maximum
N-Channel MOSFET
9.3
6.7
1.1
1.3
0.7
55
95
25
Vishay Siliconix
D
S
Si4944DY
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI4944DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4944DY-T1-E3 (Lead (Pb)-free) Si4944DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4944DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72512 S-82284-Rev. B, 22-Sep- °C J 0.8 1.0 1.2 1.4 Si4944DY Vishay Siliconix 2400 C iss 1800 1200 600 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 12 1.4 1.2 1.0 0.8 ...

Page 4

... Si4944DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 100 R * Limited by DS(on D(on) ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72512. Document Number: 72512 S-82284-Rev. B, 22-Sep- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4944DY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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