IRF9952TRPBF International Rectifier, IRF9952TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF9952TRPBF
• Description: MOSFET N+P 30V 2.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9952TRPBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 150 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF9952PBFTR; IRF9952TRPBF; IRF9952TRPBFTR

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0.80
0.60
0.40
0.20
0.00
2.0
1.5
1.0
0.5
0.0
0
-60 -40 -20
I =
D
-V
-1.0A
GS
T , Junction Temperature ( C)
3
J
, Gate-to-Source Voltage (V)
0
20 40 60 80 100 120 140 160
6
9
I
D
= -2.3A
V
°
12
GS
=
-10V
15
A
2.5
2.0
1.5
1.0
0.5
0.0
150
120
90
60
30
0
0.0
25
Starting T , Junction Temperature ( C)
1.0
50
-I , Drain Current (A)
J
D
2.0
75
V
GS
3.0
100
= -4.5V
TOP
BOTTOM
V
GS
4.0
125
= -10V
-0.58A
-1.0A
-1.3A
°
I D
7
150
5.0
A