IRF8915TRPBF International Rectifier, IRF8915TRPBF Datasheet - Page 9

• Manufacturer Part Number: IRF8915TRPBF
• Description: MOSFET 2N-CH 20V 8.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8915TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 540pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 27 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.9 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF8915PBFTR; IRF8915TRPBF; IRF8915TRPBFTR

www.irf.com
SO-8 Package Outline
SO-8 Part Marking Information
Dimensions are shown in milimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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