IRF7101PBF International Rectifier, IRF7101PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7101PBF
• Description: MOSFET N-CH 20V 3.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7101PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 320pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: N
• Current, Drain: 3.5 A
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2 W
• Resistance, Drain To Source On: 0.1 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Voltage, Breakdown, Drain To Source: 20 V
• Voltage, Gate To Source: ±12 V
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 3.5A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T
t
Source-Drain Ratings and Characteristics
IRF7101
Notes:
d(on)
V
V
g
I
Q
Q
Q
t
t
t
C
C
C
I
I
V
t
Q
t
R
I
L
L
V
S
GSS
SM
on
DSS
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
D
S
oss
SD
(BR)DSS
iss
rss
DS(ON)
g
gs
gd
rr
T
Repetitive rating; pulse width limited by
I
max. junction temperature.
SD
J
150°C
/ T
3.5A, di/dt
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Internal Source Inductance
90A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Pulse width
Min. Typ. Max. Units
––– 0.025 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
1.1
–––
–––
Surface mounted on FR-4 board, t
20
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
250
–––
–––
320
–––
4.0
6.0
–––
–––
7.0
10
24
41
30
75
36
0.10
0.15
-100
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
3.6
1.2
3.0
2.0
2.0
62
15
2.0
54
14
300µs; duty cycle
V/°C
nH
µA
nA
ns
nC
pF
ns
nC
A
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,6mm(0.25in.)
from package and center
of die contact
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
ƒ = 1.0MHz
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 1.8A
= 1.8A
= 25°C, I
= 25°C, I
= 8.2
= 26
= 12V
= 0V, I
= 16V, V
= - 12V
= 10V
= 10V
= 0V
= 10V, I
= 4.5V, I
= V
= 15V, I
= 20V, V
= 16V
= 15V
2%.
GS
, I
D
F
S
10sec.
D
D
D
= 250µA
D
= 1.7A
GS
GS
Conditions
= 1.7A, V
Conditions
= 250µA
= 1.8A
= 3.5A
= 1.0A
= 0V, T
= 0V
D
= 1mA
GS
J
G
= 125 °C
= 0V
G
S
+L
D
S
D
)
S
D