IRF8910TRPBF International Rectifier, IRF8910TRPBF Datasheet

MOSFET 2N-CH 20V 10A 8-SOIC

IRF8910TRPBF

Manufacturer Part Number
IRF8910TRPBF
Description
MOSFET 2N-CH 20V 10A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF8910TRPBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.4 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2.55V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
960pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
18.3 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
10 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
7.4 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF8910PBFTR
IRF8910TRPBF
IRF8910TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF8910TRPBF
Manufacturer:
International Rectifier
Quantity:
44 348
Part Number:
IRF8910TRPBF
Manufacturer:
IR
Quantity:
20 000
Applications
l
l
Benefits
l
l
l
l
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
Notes  through
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
Lead-Free
@ T
@ T
and Current
@T
@T
Very Low R
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
20V V
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
GS
Max. Gate Rating
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 10
at 4.5V V
Parameter
Parameter
GS
fg
GS
GS
@ 10V
@ 10V
V
20V
DSS
G2
G1
S2
S1
13.4m @V
1
2
3
4
Top View
IRF8910PbF
Typ.
–––
–––
R
DS(on)
HEXFET Power MOSFET
-55 to + 150
8
7
6
5
Max.
0.016
± 20
8.3
2.0
1.3
20
10
82
D1
D1
D2
D2
max
GS
Max.
62.5
42
= 10V
SO-8
Units
Units
10A
W/°C
°C/W
07/09/08
°C
I
W
V
A
D
1

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IRF8910TRPBF Summary of contents

Page 1

Applications Dual SO-8 MOSFET for POL l converters in desktop, servers, graphics cards, game consoles and set-top box Lead-Free l Benefits Very Low DS(on) Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage l and Current ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150° 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

Page 5

Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 ...

Page 6

125°C 10. 25°C 0. GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V L DRIVER V DS D.U ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 15. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V ...

Page 8

Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

Page 9

SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

Page 10

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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