IRF7380TRPBF International Rectifier, IRF7380TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7380TRPBF
• Description: MOSFET N-CH 80V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7380TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Drain To Source Voltage (vdss): 80V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
0.001
Fig 3. Typical Transfer Characteristics
0.01
100
Fig 1. Typical Output Characteristics
100
0.1
10
10
1
0
1
3.0
0.1
T J = 150°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4.0
1
T J = 25°C
3.7V
V DS = 15V
20µs PULSE WIDTH
5.0
10
20µs PULSE WIDTH
Tj = 25°C
TOP
BOTTOM
6.0
100
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
1000
7.0
100
Fig 2. Typical Output Characteristics
0.1
10
2.5
2.0
1.5
1.0
0.5
0.0
1
-60
Fig 4. Normalized On-Resistance
0.1
I
D
=
-40
3.6A
V DS , Drain-to-Source Voltage (V)
-20
Vs. Temperature
T
1
J
0
, Junction Temperature (°C)
IRF7380PbF
20
3.7V
40
10
20µs PULSE WIDTH
Tj = 150°C
60
80
TOP
BOTTOM
100
100
V
120
GS
=
140
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
10V
3
1000
160