IRF7303PBF International Rectifier, IRF7303PBF Datasheet - Page 3

MOSFET 2N-CH 30V 4.9A 8-SOIC

IRF7303PBF

Manufacturer Part Number
IRF7303PBF
Description
MOSFET 2N-CH 30V 4.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7303PBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.05Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
4.9A
Power Dissipation
2W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
4.9A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1000
1 0 0
100
1 0
10
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
0.1
4
TOP
BOTT OM 4.5V
V
V
5
G S
D S
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, Ga te-to-S o urce V oltage (V )
, D rain-to-S ource V oltage (V )
T = 2 5° C
J
6
1
7
T = 15 0 °C
J
V
2 0 µ s PU L SE W ID T H
20 µs P UL SE W ID TH
T = 25°C
DS
J
4.5 V
= 1 5 V
10
8
9
100
1 0
A
A
1000
100
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
10
1
Fig 2. Typical Output Characteristics
- 6 0
0.1
TOP
BOTT OM 4.5V
I
D
Fig 4. Normalized On-Resistance
- 4 0
= 4 .0A
T , Junction Temperature (°C )
V
- 2 0
J
D S
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, Drain-to-Source V oltage (V)
0
Vs. Temperature
1
2 0
4 0
6 0
2 0µ s PU L SE W ID TH
T = 1 50 °C
IRF7303
J
4.5 V
8 0
10
1 0 0 1 2 0 1 4 0 1 6 0
V
G S
= 10 V
100
A
A

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