IRF7303PBF International Rectifier, IRF7303PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7303PBF
• Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7303PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.05Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 4.9A
• Power Dissipation: 2W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
100
10
10
1
0.1
4
TOP
BOTTOM 4.5V
V
V
5
GS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25°C
J
6
1
7
T = 150°C
J
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
4.5V
= 15V
10
8
9
100
10
A
A
1000
100
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60
TOP
BOTTOM 4.5V
I
D
-40
= 4.0A
T , Junction Temperature (°C)
V
-20
J
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, Drain-to-Source Voltage (V)
0
1
20
40
60
20µs PULSE WIDTH
T = 150°C
J
4.5V
80
10
100 120 140 160
V
GS
= 10V
100
A
A