IRF7309PBF International Rectifier, IRF7309PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7309PBF
• Description: MOSFET N+P 30V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7309PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 520pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 1.4W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
100
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics,
1
0.1
4
TOP
BOTTOM 4.5V
V
V
5
GS
DS
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
15V
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25°C
J
T
1
6
J
= 25
7
o
C
T = 150°C
V
20µs PULSE WIDTH
J
20µs PULSE WIDTH
T = 25°C
DS
J
4.5V
10
= 15V
8
9
N-Channel
100
10
A
A
149
1000
100
Fig 2. Typical Output Characteristics,
10
1
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60
TOP
BOTTOM 4.5V
I
D
-40
= 4.0A
V
DS
T , Junction Temperature (°C)
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
15V
-20
J
Vs. Temperature
, Drain-to-Source Voltage (V)
T
0
J
1
= 150
20
40
o
C
20µs PULSE WIDTH
T = 150°C
60
J
IRF7309
4.5V
10
80
100 120 140 160
V
GS
= 10V
100
A
A