IRF7311PBF International Rectifier, IRF7311PBF Datasheet - Page 2
![MOSFET 2N-CH 20V 6.6A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7311PBF
Manufacturer Part Number
IRF7311PBF
Description
MOSFET 2N-CH 20V 6.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRF7311TRPBF.pdf
(7 pages)
Specifications of IRF7311PBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 4.5V
Input Capacitance (ciss) @ Vds
900pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.029Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Continuous Drain Current
6.6A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
29 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
31 ns
Gate Charge Qg
18 nC
Minimum Operating Temperature
- 55 C
Rise Time
17 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7311PBF
Manufacturer:
STM
Quantity:
5 620
Part Number:
IRF7311PBF
Manufacturer:
IR
Quantity:
20 000
2
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