IRF7311PBF International Rectifier, IRF7311PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7311PBF
• Description: MOSFET 2N-CH 20V 6.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7311PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.029Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 6.6A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 29 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 31 ns
• Gate Charge Qg: 18 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 17 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2
www.irf.com