STS8DN3LLH5 STMicroelectronics, STS8DN3LLH5 Datasheet - Page 3

• Manufacturer Part Number: STS8DN3LLH5
• Description: MOSFET 2N-CH 30V 10A SO8
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS8DN3LLH5

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 724pF @ 25V
• Power - Max: 2.7W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 22 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.7 W
• Gate Charge Qg: 5.4 nC
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10391-2

STS8DN3LLH5
1
Electrical ratings
Table 2.
1. The value is rated according R
2. Pulse width limited by safe operating area
Table 3.
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec
R
Symbol
P
Symbol
I
thj-pcb
I
TOT
DM
V
I
V
T
D
D
T
GS
DS
stg
(1)
(1)
J
(2)
(2)
(1)
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-ambient
thj-pcb
Doc ID 16967 Rev 1
C
Parameter
= 25 °C
Parameter
GS
= 0)
C
C
=100 °C
= 25 °C
-55 to 150
Value
Value
± 22
0.02
2.7
30
10
40
47
9
Electrical ratings
W/°C
°C/W
Unit
Unit
°C
W
V
V
A
A
A
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