IRF7754TRPBF International Rectifier, IRF7754TRPBF Datasheet

IRF7754TRPBF

Manufacturer Part Number

IRF7754TRPBF

Description

MOSFET P-CH DUAL 12V 5.5A 8TSSOP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7754TRPBF.pdf (9 pages)

Specifications of IRF7754TRPBF

Package / Case

8-TSSOP

Mounting Type

Surface Mount

Power - Max

Fet Type

2 P-Channel (Dual)

Gate Charge (qg) @ Vgs

22nC @ 4.5V

Vgs(th) (max) @ Id

900mV @ 250µA

Current - Continuous Drain (id) @ 25° C

5.5A

Drain To Source Voltage (vdss)

12V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

25 mOhm @ 5.4A, 4.5V

Configuration

Dual

Transistor Polarity

Dual P-Channel

Drain-source Breakdown Voltage

- 12 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

- 5.5 A

Power Dissipation

1 W

Mounting Style

SMD/SMT

Gate Charge Qg

22 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Thermal Resistance

Absolute Maximum Ratings

Description

www.irf.com

HEXFET

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

with an extremely efficient and reliable device for

battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

@ T

, T

P-Channel MOSFET

Ultra Low On-Resistance

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

STG

= 25°C

= 70°C

= 25°C

= 70°C

Power MOSFETs from International Rectifier

Gate-to-Source Voltage

Linear Derating Factor

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Parameter

provides thedesigner

@ -4.5V

1 = D1

4 = G1

2 = S1

3 = S1

-12V

DSS

HEXFET

8 = D2

5 = G2

7 = S2

6 = S2

25m @V

34m @V

49m @V

-55 to +150

Max.

125

DS(on)

Max.

0.64

0.01

-5.5

-4.4

-12

-22

±8

IRF7754

Power MOSFET

max

= -4.5V

= -2.5V

= -1.8V

TSSOP-8

PD - 94224

5.4A

4.6A

3.9A

Units

W/°C

°C/W

°C

05/14/01

Related parts for IRF7754TRPBF

IRF7754TRPBF Summary of contents

Page 1

... Available in Tape & Reel Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for battery and load management ...

Page 2

IRF7754 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ...

Page 4

IRF7754 3200 0V MHZ C iss = SHORTED 2800 C rss = C gd 2400 C oss = Ciss 2000 1600 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0. SINGLE ...

Page 6

IRF7754 0.070 0.060 0.050 0.040 -5.5A 0.030 0.020 0.010 0.0 1.0 2.0 3.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage ...

Page 7

Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 300 200 -250µA 100 0 75 100 125 150 0.0001 0.0010 ...

Page 8

IRF7754 TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF TSSOP-8 Tape and Reel DAT E CODE (YW) ...

Page 9

TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can ...

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