IRF7105PBF International Rectifier, IRF7105PBF Datasheet - Page 2
![MOSFET N/P-CH DUAL 25V 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7105PBF
Manufacturer Part Number
IRF7105PBF
Description
MOSFET N/P-CH DUAL 25V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRF7105TRPBF.pdf
(10 pages)
Specifications of IRF7105PBF
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
3.5A, 2.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
330pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
N amd P
Current, Drain
3.5/-2.3 N/P A
Package Type
SO-8
Power Dissipation
2/2 N/P W
Resistance, Drain To Source On
0.1/0.25 N/P Ohm
Thermal Resistance, Junction To Ambient
62.5/62.5 N/P °C/W
Voltage, Drain To Source
25 N V
Voltage, Gate To Source
+-20 V
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
25V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
160 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
3.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
25 ns, 37 ns
Gate Charge Qg
9.4 nC
Minimum Operating Temperature
- 55 C
Rise Time
9 ns, 13 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2
Notes:
∆
N-Channel I
P-Channel I
∆
SD
SD
≤
≤
≤
≤
J
≤
≤
≤
≤
Ω
≤
Ω
Ω
www.irf.com
≤
Ω,
Ω
≤