IRF7907PBF International Rectifier, IRF7907PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7907PBF
• Description: MOSFET N-CHAN DUAL 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7907PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.1A, 11A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 850pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: Dual N
• Current, Drain: 9.1/11 Q1/Q2 A
• Gate Charge, Total: 6.7 nC (Control FET), 14 nC (Synchronous FET)
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2/2 Q1/Q2 W
• Resistance, Drain To Source On: 0.0164/0.0118 Q1/Q2 Ohm
• Resistance, Thermal, Junction To Case: 90/62.5 Q1/Q2 DegC/W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 8 ns (Control FET), 13 ns (Synchronous FET)
• Time, Turn-on Delay: 6 ns (Control FET), 8 ns (Synchronous FET)
• Transconductance, Forward: 19 S (Control FET), 24 S (Synchronous FET)
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.1 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 3.4 ns, 5.3 ns
• Gate Charge Qg: 6.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 9.3 ns, 14 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 13. Normalized On-Resistance vs. Temperature
Fig 15. Typical Source-Drain Diode Forward Voltage
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Fig 17. Typical On-Resistance vs.Gate Voltage
100.0
10.0
1.0
0.1
1.5
1.0
0.5
40
30
20
10
0.2
-60 -40 -20
2
I D = 9.1A
V GS = 10V
T J = 150°C
0.4
V SD , Source-to-Drain Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
4
0.6
0
Q1 - Control FET
20
T J = 25°C
0.8
40
6
1.0
60
T J = 125°C
T J = 25°C
80 100 120 140 160
1.2
V GS = 0V
8
I D = 8.8A
1.4
Typical Characteristics
1.6
10
Fig 16. Typical Source-Drain Diode Forward Voltage
Fig 14. Normalized On-Resistance vs. Temperature
Fig 18. Typical On-Resistance vs.Gate Voltage
1.5
1.0
0.5
100.0
10.0
1.0
0.1
40
30
20
10
-60 -40 -20
0
0.2
I D = 11A
V GS = 10V
2
T J = 150°C
0.4
V SD , Source-to-Drain Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q2 - Synchronous FET
0
4
0.6
20
T J = 25°C
0.8
40
6
60
1.0
T J = 125°C
T J = 25°C
80 100 120 140 160
1.2
V GS = 0V
8
I D = 11A
1.4
1.6
10
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