IRFI4019H-117P International Rectifier, IRFI4019H-117P Datasheet

IRFI4019H-117P

Manufacturer Part Number

IRFI4019H-117P

Description

MOSFET N-CH 150V 8.7A TO-220FP-5

Manufacturer

International Rectifier

Datasheet

1.IRFI4019H-117P.pdf (8 pages)

Specifications of IRFI4019H-117P

Fet Type

2 N-Channel (Dual)

Fet Feature

Standard

Rds On (max) @ Id, Vgs

95 mOhm @ 5.2A, 10V

Drain To Source Voltage (vdss)

150V

Current - Continuous Drain (id) @ 25° C

8.7A

Vgs(th) (max) @ Id

4.9V @ 50µA

Gate Charge (qg) @ Vgs

20nC @ 10V

Input Capacitance (ciss) @ Vds

810pF @ 25V

Power - Max

18W

Mounting Type

Through Hole

Package / Case

TO-220-5 Full Pack (Straight Leads)

Configuration

Dual

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

95 mOhms

Drain-source Breakdown Voltage

150 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

8.7 A

Power Dissipation

18 W

Mounting Style

Through Hole

Gate Charge Qg

13 nC

Minimum Operating Temperature

- 40 C

For Use With

IRAUDAMP7S - BOARD REF DESIGN 2CH AUDIO AMP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It

consists of two power MosFET switches connected in half-bridge configuration. The latest process is used

to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and

internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such

as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable

device for Class D audio amplifier applications.

Notes through † are on page 2

Features

www.irf.com

Absolute Maximum Ratings h

Thermal Resistance h

STG

θJC

θJA

@ T

Integrated Half-Bridge Package

Reduces the Part Count by Half

Facilitates Better PCB Layout

Key Parameters Optimized for Class-D

Audio Amplifier Applications

Low R

Low Qg and Qsw for Better THD and

Improved Efficiency

Low Qrr for Better THD and Lower EMI

Can Delivery up to 200W per Channel into

8Ω Load in Half-Bridge Configuration

Amplifier

Lead-Free Package

= 25°C

= 100°C

= 25°C

= 100°C

DS(ON)

for Improved Efficiency

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current c

Single Pulse Avalanche Energyd

Power Dissipation f

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Junction-to-Case f

Junction-to-Ambient f

Parameter

@ 10V

DS(ON)

G(int)

max

typ.

G1, G2

Gate

typ.

typ. @ 10V

IRFI4019H-117P

Key Parameters h

Typ.

–––

10lbxin (1.1Nxm)

-55 to + 150

D1, D2

Drain

Max.

0.15

150

300

±20

8.7

6.2

7.2

TO-220 Full-Pak 5 PIN

Max.

6.9

150

4.1

2.5

Source

S1, S2

Units

W/°C

°C

Ω

8/22/06

Related parts for IRFI4019H-117P

IRFI4019H-117P Summary of contents

Page 1

... Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6- screw Thermal Resistance h Junction-to-Case f R θJC Junction-to-Ambient f R θJA Notes through † are on page 2 www.irf.com IRFI4019H-117P Key Parameters typ. @ 10V DS(ON) Q typ typ typ. G(int) T ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

TOP 10 BOTTOM 1 5.5V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 175° 25°C 1 ...

Page 4

150° 25°C 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 T J ...

Page 5

125°C 0 25°C 0 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage + ƒ • • - • + ‚ - ...

Page 6

D.U 20V GS 0.01 Ω Fig 15a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 16a. Switching Time Test Circuit DUT Fig 17a. Gate ...

Page 7

TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117 (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak 5-Pin Part Marking Information IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com PS Data and specifications subject ...

Page 8

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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