2N7002DW L6327 Infineon Technologies, 2N7002DW L6327 Datasheet - Page 7

• Manufacturer Part Number: 2N7002DW L6327
• Description: MOSFET 2N-CH 60V 300MA SOT363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of 2N7002DW L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 20pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000408436

Rev.2.2
13Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
10
70
65
60
55
50
AV
-1
-2
-3
0
-40
=f(T
10
); R
0
j
); I
J(start)
GS
D
=25 Ω
=250 µA
0
10
1
125 °C
40
T
t
AV
j
[°C]
[µs]
100 °C
80
10
2
25 °C
120
160
10
page 7
3
14 Typ. gate charge
V
parameter: V
GS
=f(Q
10
9
8
7
6
5
4
3
2
1
0
0
gate
); I
DD
D
=0.5 A pulsed
0.1
12 V
0.2
Q
gate
30 V
[nC]
48 V
0.3
2N7002DW
0.4
2011-06-16
0.5