NTZD5110NT1G ON Semiconductor, NTZD5110NT1G Datasheet - Page 3
![MOSFET N-CH DUAL 60V SOT563-6](/photos/5/30/53073/sot-563-6_463a_sml.jpg)
NTZD5110NT1G
Manufacturer Part Number
NTZD5110NT1G
Description
MOSFET N-CH DUAL 60V SOT563-6
Manufacturer
ON Semiconductor
Datasheet
1.NTZD5110NT1G.pdf
(5 pages)
Specifications of NTZD5110NT1G
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
294mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
24.5pF @ 20V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.6 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.294 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTZD5110NT1G
Manufacturer:
ON Semiconductor
Quantity:
3 100
Company:
Part Number:
NTZD5110NT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTZD5110NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
1.6
1.2
0.8
0.4
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
2.4
2.0
1.6
1.2
0.8
0.4
0
0
0
0
2
Figure 3. On−Resistance vs. Drain Current and
Figure 5. On−Resistance vs. Gate−to−Source
6.0 V
V
GS
I
7.0 V
D
Figure 1. On−Region Characteristics
8.0 V
= 200 mA
V
= 4.5 V
V
0.2
DS
GS
9.0 V
, DRAIN−TO−SOURCE VOLTAGE (V)
I
, GATE−TO−SOURCE VOLTAGE (V)
D
V
4
= 500 mA
GS
I
D
0.4
, DRAIN CURRENT (A)
= 10 V
2
Temperature
Voltage
T
0.6
6
J
= 125°C
T
J
= 85°C
0.8
4
TYPICAL CHARACTERISTICS
T
8
T
J
J
= −55°C
1.0
= 25°C
5.0 V
http://onsemi.com
4.0 V
4.5 V
3.5 V
3.0 V
2.5 V
1.2
10
6
3
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
1.2
0.8
0.4
2.2
1.8
1.4
1.0
0.6
0
0
−50
0
0
Figure 4. On−Resistance vs. Drain Current and
I
D
V
= 0.2 A
−25
Figure 6. On−Resistance Variation with
GS
T
J
0.2
V
Figure 2. Transfer Characteristics
= 10 V
= 125°C
GS
T
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
T
0
J
= 25°C
I
D
0.4
, DRAIN CURRENT (A)
2
25
Temperature
Temperature
T
J
0.6
50
= −55°C
V
75
GS
0.8
4
= 4.5 V
100
T
T
T
T
J
J
J
J
V
= 125°C
= −55°C
= 85°C
= 25°C
1.0
GS
125
= 10 V
150
1.2
6