NTJD4401NT1G ON Semiconductor, NTJD4401NT1G Datasheet

MOSFET 2N-CH 20V 630MA SOT-363

NTJD4401NT1G

Manufacturer Part Number
NTJD4401NT1G
Description
MOSFET 2N-CH 20V 630MA SOT-363
Manufacturer
ON Semiconductor
Type
Small Signalr

Specifications of NTJD4401NT1G

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
375 mOhm @ 630mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
630mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 4.5V
Input Capacitance (ciss) @ Vds
46pF @ 20V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.375 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
2 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.91 A
Power Dissipation
550 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.375Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-88
Module Configuration
Dual
Continuous Drain Current Id
630mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
375mohm
Rds(on) Test Voltage Vgs
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTJD4401NT1GOS
NTJD4401NT1GOS
NTJD4401NT1GOSTR

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NTJD4401N
Small Signal MOSFET
20 V, Dual N-Channel, SC-88
ESD Protection
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
© Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 4
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current
(Based on R
Power Dissipation
(Based on R
Continuous Drain
Current
(Based on R
Power Dissipation
(Based on R
Pulsed Drain Current
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction-to-Ambient – Steady State
Junction-to-Lead (Drain) – Steady State
Small Footprint (2 x 2 mm)
Low Gate Charge N-Channel Device
ESD Protected Gate
Same Package as SC-70 (6 Leads)
Pb-Free Packages are Available
Load Power switching
Li-Ion Battery Supplied Devices
Cell Phones, Media Players, Digital Cameras, PDAs
DC-DC Conversion
qJA
qJA
qJL
qJL
Parameter
)
)
)
)
Parameter
(T
Steady
Steady
Steady
Steady
State
State
State
State
J
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
T
t ≤10 ms
A
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 85°C
= 25°C
= 85°C
= 25°C
= 85°C
(Note 1)
Symbol
R
R
qJA
qJL
T
Symbol
J
V
V
, T
I
P
P
T
DSS
DM
I
I
I
GS
D
D
S
D
D
L
STG
Typ
400
194
-55 to
Value
0.63
0.46
0.27
0.14
0.91
0.65
0.55
0.29
±1.2
0.63
±12
150
260
20
Max
460
226
1
Units
°C/W
Unit
°
°C
W
W
V
V
A
A
A
A
C
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
V
(BR)DSS
20 V
SC-88/SOT-363
CASE 419B
(Note: Microdot may be in either location)
G
D
S
STYLE 28
1
1
2
ORDERING INFORMATION
TD
M
G
1
1
2
3
http://onsemi.com
0.22 W @ 4.5 V
0.32 W @ 2.5 V
0.51 W @ 1.8 V
SC-88 (SOT-363)
R
DS(on)
= Device Code
= Date Code
= Pb-Free Package
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
Typ
Publication Order Number:
6
1
D1 G2 S2
S1 G1 D2
TD M G
G
6
5
4
NTJD4401N/D
0.775 A
I
D
Max
D
G
S
2
1
2

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NTJD4401NT1G Summary of contents

Page 1

NTJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features • Small Footprint ( mm) • Low Gate Charge N-Channel Device • ESD Protected Gate • Same Package as SC-70 (6 Leads) • Pb-Free Packages are ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance CHARGES AND ...

Page 3

TYPICAL PERFORMANCE CURVES 0.8 0.6 0.4 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On-Region Characteristics 0.7 V ...

Page 4

... TOTAL GATE CHARGE (nC) g Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge ORDERING INFORMATION Device NTJD4401NT1 NTJD4401NT1G NTJD4401NT2 NTJD4401NT2G NTJD4401NT4 NTJD4401NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 5

... Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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