UPA505T-T2-A Renesas Electronics America, UPA505T-T2-A Datasheet - Page 9

• Manufacturer Part Number: UPA505T-T2-A
• Description: MOSFET N/P-CH 50V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA505T-T2-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 Ohm @ 10mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.8V @ 1µA
• Input Capacitance (ciss) @ Vds: 16pF @ 5V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

100
140
120
100
500
200
100
50
80
60
40
20
50
20
10
0
–30
5
–5
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
V
I
D
GS
= –10 mA
= –4 V
–10
SWITCHING CHARACTERISTICS
0
I
–4
D
V
= –1 mA
T
GS
I
ch
D
–20
- Gate to Source Voltage - V
= –10 mA
- Channel Temperature - ˚C
30
I
D
–8
- Drain Current - mA
60
t
–50
t
f
r
t
t
d(off)
d(on)
–12
–100
90
Pulsed
measurement
V
V
R
DD
GS
G
–16
–200
= 10
= –5.0 V
= –4 V
120
–20
150
–500
100
150
100
0.5
0.2
0.1
100
50
20
10
50
0.1
10
5
2
1
0
0.1
–1
1
0.5
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
–1
–2
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
A
0.6
= 150 ˚C
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
V
–25 ˚C
–2
DS
SD
75 ˚C
25 ˚C
- Drain to Source Voltage - V
- Source to Drain Voltage - V
I
D
–5
- Drain Current - mA
0.7
–5
–10
–10
0.8
–20
–20
V
Pulsed
measurement
PA505T
GS
0.9
V
f = 1 MHz
C
C
C
–50
= –4 V
GS
oss
rss
iss
–50 –100
= 0
–100
1
7