UPA679TB-T1-A Renesas Electronics America, UPA679TB-T1-A Datasheet

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UPA679TB-T1-A

Manufacturer Part Number
UPA679TB-T1-A
Description
MOSFET N/P-CH 20V SC-70
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPA679TB-T1-A

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
570 mOhm @ 300mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
350mA, 250mA
Vgs(th) (max) @ Id
1.5V @ 1mA
Input Capacitance (ciss) @ Vds
28pF @ 10V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

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UPA679TB-T1-A Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for ...

Page 4

ELECTRICAL CHARACTERISTICS = 25° ° ° ° C) (1) N-ch PART (T A CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance ...

Page 5

P-ch PART (T = 25° ° ° ° CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer ...

Page 6

TYPICAL CHARACTERISTICS (1) N-ch PART (T = 25°C) A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° DRAIN CURRENT vs. ...

Page 7

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.2 Pulsed 2 0. 0.8 0 ...

Page 8

SWITCHING CHARACTERISTICS 1000 Ω d(off) 100 d(on) 10 0.01 0 Drain Current - SOURCE ...

Page 9

P-ch PART (T = 25°C) A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - °C A DRAIN CURRENT vs. DRAIN TO ...

Page 10

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE −2 −0. −4 −4 −0. ...

Page 11

SWITCHING CHARACTERISTICS 1000 = −10 −4 Ω 100 t d(off d(on) 10 -0.01 -0 Drain Current - A D ...

Page 12

The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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