NTJD1155LT1G ON Semiconductor, NTJD1155LT1G Datasheet - Page 4

• Manufacturer Part Number: NTJD1155LT1G
• Description: MOSFET N/P-CH 8V 1.3A SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD1155LT1G

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.32 Ohm @ P Channel
• Drain-source Breakdown Voltage: 8 V @ P Channel
• Gate-source Breakdown Voltage: 8 V @ N Channel
• Continuous Drain Current: +/- 1.3 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NTJD1155LT1GOSTR

22
20
18
16
14
12
10
8
6
4
2
0
0.01
0
0.1
10
0.001
I
V
Ci = 10 mF
Co = 1 mF
1
L
on/off
= 1 A
0.2
0.1
SINGLE PULSE
1
D = 0.5
= 3 V
Figure 8. Switching Variation
R2 @ V
2
0.01
Normalized to R
in
TYPICAL PERFORMANCE CURVES
3
= 4.5 V, R1 = 20 kW
0.02
0.01
R2 (kW)
t
d(off)
4
t
0.05
f
12
10
8
6
4
2
0
0
qJA
5
SQUARE WAVE PULSE DURATION TIME t, (s)
I
V
Ci = 10 mF
Co = 1 mF
L
on/off
at Steady State ( 1 inch pad)
= 1 A
Figure 11. FET Thermal Response
1
6
= 3 V
Figure 10. Switching Variation
0.1
R2 @ V
2
http://onsemi.com
7
t
r
t
d(on)
in
3
= 2.5 V, R1 = 20 kW
8
4
R2 (kW)
P
4
(pk)
1
DUTY CYCLE, D = t
40
36
32
28
24
20
16
12
(T
8
4
0
J
t
0
1
5
= 25°C unless otherwise noted)
I
V
Ci = 10 mF
Co = 1 mF
t
t
L
t
d(off)
2
d(on)
ON/OFF
t
t
= 1 A
r
f
1
6
= 1.5 V
Figure 9. Switching Variation
R2 @ V
10
2
7
1
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
3
J(pk)
qJC
8
in
t
= 2.5 V, R1 = 20 kW
(t) = r(t) R
f
R2 (kW)
− T
4
C
= P
100
qJC
(pk)
5
1
R
qJC
6
(t)
t
d(off)
7
t
d(on)
1000
t
r
8