NTHD4102PT1G ON Semiconductor, NTHD4102PT1G Datasheet - Page 2

• Manufacturer Part Number: NTHD4102PT1G
• Description: MOSFET PWR P-CH DUAL20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4102PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 750pF @ 16V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD4102PT1GOS; NTHD4102PT1GOS; NTHD4102PT1GOSTR

2. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES, CAPACITANCES, AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Characteristic
J
= 25°C unless otherwise noted)
http://onsemi.com
V
V
Symbol
V
(Br)DSS/
R
V
Q
GS(TH)/
NTHD4102P
t
C
C
t
(Br)DSS
d(OFF)
GS(TH)
DS(ON)
I
I
C
G(TOT)
Q
Q
d(ON)
Q
V
g
DSS
GSS
t
OSS
RSS
RR
ta
tb
FS
ISS
t
t
SD
GS
GD
RR
r
f
T
T
2
J
J
V
V
V
V
V
V
GS
V
V
V
V
GS
DS
V
V
GS
V
I
GS
GS
DS
GS
GS
DS
D
V
DS
GS
GS
GS
= 0 V, dI
= −16 V
= −4.5 V, V
= −2.6 A, R
= −4.5 V, V
= 0 V
= 0 V, V
= V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
Test Condition
= −10 V, I
= 0 V, I
= 0 V, f = 1.0 MHz,
V
= 0 V, I
I
DS
D
I
S
DS,
= −2.6 A
= 1.0 A
= −16 V
S
D
GS
I
/dt = 100 A/ms,
D
S
= −250 mA
D
DS
DD
D
G
= −250 mA
D
D
= −1.1 A
T
T
= "8.0 V
= −2.9 A
= −2.9 A
= −2.2 A
= −1.0 A
= 2.0 W
J
J
= −16 V,
= −16 V,
= 25°C
= 85°C
−0.45
Min
−20
−0.8
0.01
Typ
−15
120
750
100
2.7
7.0
7.6
1.3
2.6
5.5
64
85
45
12
32
23
20
15
5
"100
Max
−1.0
−5.0
−1.5
−1.2
110
170
8.6
80
10
25
40
35
40
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
mC
ns
ns
V
V
S
V