NTHD3100CT1G ON Semiconductor, NTHD3100CT1G Datasheet - Page 3

MOSFET N/P-CH 20V 2.9A CHIPFET

NTHD3100CT1G

Manufacturer Part Number
NTHD3100CT1G
Description
MOSFET N/P-CH 20V 2.9A CHIPFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTHD3100CT1G

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.9A, 3.2A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
2.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
165pF @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-ChipFET™
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6 S, 8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V @ N Channel or +/- 8 V @ P Channel
Continuous Drain Current
2.9 A @ N Channel or 3.2 A @ P Channel
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTHD3100CT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTHD3100CT1G
Manufacturer:
ON
Quantity:
2 400
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(continued) (T
Symbol
t
t
t
t
d(OFF)
d(OFF)
d(ON)
d(ON)
Q
V
t
RR
t
t
t
t
t
t
SD
RR
a
b
r
f
r
f
N/P
J
http://onsemi.com
N
P
N
P
N
P
N
P
N
P
N
P
= 25°C unless otherwise noted)
V
GS
dI
3
S
= 0 V, T
V
V
/ dt = 100 A/ms
V
GS
GS
I
I
D
GS
D
= −3.2 A, R
= 0 V,
= −4.5 V, V
= 2.9 A, R
Test Conditions
= 4.5 V, V
J
= 25 °C
G
DD
DD
G
= 2.5 W
= 2.5 W
= 10 V,
= −10 V,
I
I
I
I
I
I
S
I
S
I
S
I
S
I
S
S
S
S
S
S
= −2.5 A
= −1.5 A
= −1.5 A
= −1.5 A
= −1.5 A
= 2.5 A
= 1.5 A
= 1.5 A
= 1.5 A
= 1.5 A
Min
10.7
12.4
−0.8
12.5
13.5
11.7
Typ
6.3
9.6
1.5
5.8
0.8
9.0
9.5
3.5
4.0
6.0
6.5
16
Max
1.15
−1.2
Unit
nC
ns
ns
V

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