UPA2757GR-E1-AT Renesas Electronics America, UPA2757GR-E1-AT Datasheet

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UPA2757GR-E1-AT

Manufacturer Part Number
UPA2757GR-E1-AT
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPA2757GR-E1-AT

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
36 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
400pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPA2757GR-E1-AT
Manufacturer:
SIPEX/EXAR
Quantity:
2 000
Part Number:
UPA2757GR-E1-AT
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

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UPA2757GR-E1-AT Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

N-CHANNEL POWER MOS FET DESCRIPTION μ The PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance R = 36.0 mΩ MAX DS(on 50.0 mΩ ...

Page 4

ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage ( Gate to Source Voltage ( Note2 Drain Current (DC 25°C) C Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit) ...

Page 5

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

Page 6

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA ...

Page 7

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 Pulsed Drain to Source Voltage - V DS GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL ...

Page 8

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed 4 - 100 - Channel Temperature - ° SWITCHING ...

Page 9

TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Reel side MARKING INFORMATION RECOMMENDED SOLDERING CONDITIONS μ The PA2757GR should be soldered and mounted under the following recommended conditions. For soldering methods ...

Page 10

The information in this document is current as of November, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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