UPA2791GR-E1-AT Renesas Electronics America, UPA2791GR-E1-AT Datasheet - Page 4

• Manufacturer Part Number: UPA2791GR-E1-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA2791GR-E1-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

<R>
<R>
<R>
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10
2
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
3. Starting T
2. Mounted on ceramic substrate of 2000 mm
PARAMETER
μ
C
Note1
ch
s, Duty Cycle ≤ 1%
= 25°C)
= 25°C, V
Note3
DS
Note3
GS
= 0 V)
= 0 V)
Note2
Note2
Note2
DD
= 1/2 x V
A
DSS
= 25°C. All terminals are connected.)
V
V
I
I
P
P
T
T
I
E
, R
D(DC)
D(pulse)
AS
ch
stg
DSS
GSS
T1
T2
AS
Data Sheet G18207EJ2V0DS
SYMBOL
G
= 25 Ω, L = 100
2
x 1.6 mmt
N-CHANNEL
μ
H, V
±20
±20
30
±5
5
GS
= V
−55 to +150
GSS
150
1.7
2.0
2.5
→ 0 V
P-CHANNEL
−30
m
m
m
−5
20
20
5
μ
PA2791GR
UNIT
mJ
°C
°C
W
W
V
V
A
A
A