UPA1793G-E1-AT Renesas Electronics America, UPA1793G-E1-AT Datasheet - Page 12
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UPA1793G-E1-AT
Manufacturer Part Number
UPA1793G-E1-AT
Description
MOSFET N/P-CH 20V 8-SOIC
Manufacturer
Renesas Electronics America
Datasheet
1.UPA1793G-E1-AT.pdf
(14 pages)
Specifications of UPA1793G-E1-AT
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
69 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
3.1nC @ 4V
Input Capacitance (ciss) @ Vds
160pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
) P-Channel
10
2 0 0
1 5 0
1 0 0
100
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
5 0
100
1
0
- 0.1
10
-5 0
- 0.1
V
f = 1 M Hz
V
T
G S
DS
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
ch
F
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
- Diode Forward Current - A
= 0 V
- Drain to Source Voltage - V
- Channel Temperature - C
0
V
- 1
G S
- 1
=
2 .5 V
5 0
4 .5 V
di/dt = 10 A/ s
V
- 10
GS
4 .0 V
- 10
= 0 V
1 0 0
P u ls e d
C
C
C
oss
rss
iss
- 100
DataSheet G16059EJ1V0DS
1 5 0
- 100
- 0.01
- 100
10 00 0
- 20
- 16
- 12
- 0.1
- 10
10 00
- 8
- 4
- 1
10 0
0
10
DYNAMIC INPUT/OUTPUT CHARACTERITICS
0
0
- 0.1
V
F(S-D)
t
f
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
SWITCHING CHARACTERISTICS
t
d(off)
V
t
- Source to Drain Voltage - V
1
Q
GS
d(on)
G
= 4.5 V
- Gate Charge - nC
V
D D
- 1
I
D
0.5
- Drain Current - A
= 16 V
t
r
10 V
2
4 V
0 V
- 10
V
V
R
V
3
I
D D
G S
G
D
D S
= 10
= 3 A
Pulsed
PA1793
= -1 0 V
=
V
1
G S
4 V
- 10 0
4
- 5
- 4
- 3
- 2
- 1
0