UPA1793G-E2-AT Renesas Electronics America, UPA1793G-E2-AT Datasheet - Page 7

• Manufacturer Part Number: UPA1793G-E2-AT
• Description: MOSFET N/P-CH 20V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1793G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 69 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4V
• Input Capacitance (ciss) @ Vds: 160pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
A) N-Channel
100
0.01
100
80
60
40
20
0.1
10
0
1
0.1
0
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
Single pulse
A
R
(at V
= 25 C
25
DS(on)
V
T
DS
GS
A
DC
limited
- Ambient Temperature - C
I
- Drain to Source Voltage - V
= 4.5 V)
D(pulse)
I
50
D(DC)
1000
0.01
Power dissipation
limited
100
0.1
Mounted on ceramic substrate
of 5500 mm
1
10
100
1
75
Mounted on ceramic substrate of
5500 mm
Single pulse, 1 unit, T
100
2
x 2.2 mm , 1 unit
1 m
10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
2
A
125
PW = 100 s
x 2.2 mm
= 25°C)
1 m s
10 m s
100 m s
150
10 m
A
DataSheet G16059EJ1V0DS
= 25 C
175
100
PW - Pulse Width - s
100 m
1
2.8
2.4
1.6
1.2
0.8
0.4
2
0
R
0
th(ch-A)
10
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
= 73.5 C/W
1 unit
T
2 units
A
Mounted on ceramic substrate of
5500 mm
- Ambient Temperature - C
100
50
75
2
x 2.2 mm
1000
100
125
150
PA1793
175
5