UPA1792G-E2-AT Renesas Electronics America, UPA1792G-E2-AT Datasheet - Page 4

• Manufacturer Part Number: UPA1792G-E2-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1792G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.8A, 5.8A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T
2
Notes 1. PW
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
2. Mounted on ceramic substrate of 2000 mm
PARAMETER
10 s, Duty Cycle
Note1
DS
GS
= 0 V)
= 0 V)
Note2
Note2
1%
SYMBOL
A
I
= 25°C. All terminals are connected.)
I
D(pulse)
V
V
D(DC)
T
T
P
P
DSS
GSS
stg
ch
Data Sheet G14557EJ3V0DS
T
T
2
x 1.6 mm
N-CHANNEL
27.2
30
6.8
20
55 to +150
150
1.7
2.0
P-CHANNEL
m
m
m
23.2
5.8
30
20
PA1792
UNIT
°C
°C
W
W
V
V
A
A