NTMD6601NR2G ON Semiconductor, NTMD6601NR2G Datasheet - Page 2
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NTMD6601NR2G
Manufacturer Part Number
NTMD6601NR2G
Description
MOSFET N-CH 80V 1.1A 8SOIC
Manufacturer
ON Semiconductor
Datasheet
1.NTMD6601NR2G.pdf
(6 pages)
Specifications of NTMD6601NR2G
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
215 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
600mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
15 V
Continuous Drain Current
1.4 A
Power Dissipation
1 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Gate Charge Qg
5 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
BODY - DRAIN DIODE RATINGS (Note 3)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain-to-Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Characteristic
(T
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
Q
Q
V
GS(TH)
R
Q
t
t
(BR)DSS
C
C
t
t
d(OFF)
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
G(TOT)
d(ON)
d(ON)
Q
DS(on)
V
G(TH)
DSS
GSS
t
T
OSS
RSS
RR
T
ISS
GD
t
t
t
t
SD
GS
RR
r
r
f
f
a
b
/T
/T
NTMD6601NR2G
J
J
http://onsemi.com
V
V
V
GS
GS
GS
V
V
V
V
V
V
I
GS
GS
= 0 V, f = 1.0 MHz, V
= 5.0 V, V
DS
GS
D
GS
= 10 V, V
V
V
GS
V
V
V
GS
I
GS
= 1.0 A
I
2
DS
GS
D
D
GS
= 5.0 V
= 0 V, d
= 80 V
= 10 V
= 0 V,
= 0 V
= 1.0 A, R
= 2.5 A, R
Test Condition
= 4.5 V, V
= 10 V, V
= 0 V, V
= V
= 0 V, I
I
S
DS
DS
DS
= 1.0 A
IS
, I
/d
= 40 V, I
= 40 V, I
D
GS
D
DD
t
G
G
= 250 mA
DD
= 250 mA
= 100 A/ms,
= 47 W
= ±15 V
= 27 W
= 40 V,
T
T
= 40 V,
T
T
I
I
J
D
D
J
J
J
DS
= 125°C
D
= 150°C
= 2.2 A
= 1.0 A
D
= 25°C
= 25°C
= 1.0 A
= 1.0 A
= 25 V
Min
1.0
80
99.8
2.75
Typ
190
215
220
105
1.9
4.6
5.0
0.4
1.0
9.0
0.8
0.6
55
16
21
62
52
50
15
95
50
44
21
23
43
±100
Max
215
245
400
100
105
1.0
3.0
9.0
1.0
25
30
15
35
85
85
86
mV/°C
mV/°C
Unit
mW
nA
nC
nC
nC
mA
pF
ns
ns
ns
V
V
V