IRF7325 International Rectifier, IRF7325 Datasheet - Page 2

• Manufacturer Part Number: IRF7325
• Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7325

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 7.8A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2020pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7325; Q1153815D

Source-Drain Ratings and Characteristics
IRF7325
Notes:
Electrical Characteristics @ T
V
I
I
V
t
Q
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
SM
I
S
rr
I
d(on)
r
d(off)
f
DSS
GSS
V
fs
SD
2
GS(th)
(BR)DSS
rr
iss
oss
rss
DS(on)
g
gs
gd
Repetitive rating; pulse width limited by
Pulse width
max. junction temperature.
(BR)DSS
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
-0.40 ––– -0.90
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
––– 0.007 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2020 –––
–––
–––
-12
–––
17
–––
When mounted on 1 inch square copper board.
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
240
180
520
330
5.0
4.7
9.4
9.8
36
28
22
-2.0
-1.2
-1.0
–––
–––
100
–––
–––
–––
–––
–––
–––
-25
-39
7.5
7.0
42
54
24
33
49
33
V/°C
m
nC
µA
nC
ns
pF
ns
nA
V
V
V
S
A
p-n junction diode.
di/dt = -100A/µs
MOSFET symbol
showing the
integral reverse
T
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
D
GS
GS
DS
= -7.8A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= V
= -10V, I
= -9.6V, V
= -9.6V, V
= -6.0V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -8.0V
= 8.0V
= -4.5V
= -6.0V
= -4.5V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -2.0A
= -2.0A, V
D
D
D
= -250µA
GS
GS
= -7.8A
= -7.8A
= -6.2A
= -3.9A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
G
= 0V
= 70°C
D
S