IRF5850 International Rectifier, IRF5850 Datasheet

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... This Dual TSOP-6 package is ideal for applications where printed circuit board space premium and where maximum functionality is required. With two die per package, the IRF5850 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and R reduction enables an increase in DS(on) current-handling capability ...

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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

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VGS TOP -7.0V -5.0V -4.5V -2.5V -2.0V -1.8V 10 -1.5V BOTTOM -1.2V 1 -1.2V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 10 ...

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1MHz iss rss 400 oss iss 300 200 100 C oss ...

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Fig 9. Maximum Drain Current Vs. Junction Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE 1 (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 10. Typical ...

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-2.2A 0.12 0.08 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic Gate ...

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Temperature ( °C ) Fig 14. Threshold Voltage Vs. Temperature www.irf.com -250µ 0.001 75 100 125 150 ...

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8 www.irf.com ...

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... IRF5806 DATE CODE EXAMPLES: YWW = 9603 = 6C YWW = 9632 = FF Notes : T his part marking information applies to devices produced after 02/26/2001 PART NUMBER PART NUMB ER CODE REFERENCE SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF5810 L = IRF5804 M = IRF5803 N = IRF5820 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR JAPAN: K& ...