IRF5810 International Rectifier, IRF5810 Datasheet - Page 5

• Manufacturer Part Number: IRF5810
• Description: MOSFET 2P-CH 20V 2.9A 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5810

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 9.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 16V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
100
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
D = 0.50
25
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
t , Rectangular Pulse Duration (sec)
125
°
1
150
0.01
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
t
d(on)
J
t
r
DM
x Z
1
thJA
P
2
DM
1
+ T
t
d(off)
A
t
1
t
t
2
f
-
+
5
10