IRF5851 International Rectifier, IRF5851 Datasheet - Page 11

• Manufacturer Part Number: IRF5851
• Description: MOSFET N/PCH 20V 2.7A/2.2A 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5851

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2.2A
• Vgs(th) (max) @ Id: 1.25V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 400pF @ 15V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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Fig 27. Typical On-Resistance Vs. Gate
0.24
0.20
0.16
0.12
0.08
Fig 29a. Basic Gate Charge Waveform
V
2.0
G
Q
-V GS, Gate -to -Source Voltage (V)
GS
3.0
Voltage
Charge
Q
4.0
Q
GD
G
I D = -2.2A
5.0
6.0
P-Channel
7.0
Fig 28. Typical On-Resistance Vs. Drain
0.40
0.30
0.20
0.10
Fig 29b. Gate Charge Test Circuit
0
12V
V
GS
Same Type as D.U.T.
Current Regulator
.2µF
2
-I D , Drain Current (A)
50KΩ
-3mA
Current Sampling Resistors
Current
V GS = -4.5V
.3µF
4
I
V GS = -2.5V
G
IRF5851
D.U.T.
6
I
D
+
-
V
8
DS
11
10