IRF7754 International Rectifier, IRF7754 Datasheet - Page 2

MOSFET 2P-CH 12V 5.5A 8-TSSOP

IRF7754

Manufacturer Part Number
IRF7754
Description
MOSFET 2P-CH 12V 5.5A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7754

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 5.4A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 4.5V
Input Capacitance (ciss) @ Vds
1984pF @ 6V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

IRF7754
Source-Drain Ratings and Characteristics
Notes:
Electrical Characteristics @ T
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
S
SM
I
I
d(on)
d(off)
rr
r
f
V
DSS
GSS
2
fs
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
Repetitive rating; pulse width limited by
DS(on)
Pulse width
(BR)DSS
max. junction temperature.
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
–––
–––
–––
–––
––– 0.008 –––
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1984 –––
–––
–––
-12
16
ƒ
When mounted on 1 inch square copper board, t < 10 sec.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
267
191
618
385
3.9
4.8
9.8
39
27
22
18
14.7
-1.2
-0.9
-1.0
–––
–––
100
–––
–––
–––
401
287
–––
–––
-22
-25
-1.0
59
41
25
34
49
27
V/°C Reference to 25°C, I
m
nC
µA
nC
ns
ns
pF
nA
V
V
V
S
A
MOSFET symbol
p-n junction diode.
T
T
di/dt = -100A/µs
showing the
integral reverse
V
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -5.4A
= -1.0A
= 25°C, I
= 25°C, I
= 6
= 6
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= V
= -10V, I
= -9.6V, V
= -9.6V, V
= -8V
= 8V
= -6V
= -4.5V ‚
= -6V, V
= 0V
= -6V
GS
Conditions
, I
D
S
F
D
Conditions
GS
= -250µA
D
= -1.0A, V
= -1.0A
D
D
D
= -250µA
GS
GS
= -5.4A
= -5.4A ‚
= -4.6A ‚
= -3.9A ‚
= -4.5V
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
G
= 70°C
= 0V
S
D

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