IRF7751 International Rectifier, IRF7751 Datasheet - Page 2
IRF7751
Manufacturer Part Number
IRF7751
Description
MOSFET 2P-CH 30V 4.5A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7751.pdf
(8 pages)
Specifications of IRF7751
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1464pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
IRF7751
Notes:
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
I
V
fs
(BR)DSS
GS(th)
GSS
SD
iss
oss
rss
rr
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
Pulse width
(BR)DSS
max. junction temperature.
2
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
When mounted on 1 inch square copper board, t < 10 sec.
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1464 –––
–––
–––
–––
––– 0.020 –––
–––
-30
6.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
155
227
–––
–––
––– -100
146
5.5
5.0
19
29
13
16
80
23
-1.2
–––
-2.5
–––
100
–––
–––
233
120
–––
–––
-18
-15
-25
-1.0
35
28
35
55
44
20
24
V/°C
m
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
A
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
D
D
V
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
GS
= -4.5A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= 0V, I
= -10V, I
= -4.5V, I
= V
= -10V, I
= -24V, V
= -24V, V
= -20V
= 20V
= -15V
= -10V
= -15V
= 0V
= -25V
= -10V
GS
Conditions
, I
D
S
F
D
Conditions
D
= -250µA
D
= -1.0A, V
= -1.0A
D
GS
GS
= -250µA
= -4.5A
= -4.5A
= -3.8A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
D
S