IRF7757TR International Rectifier, IRF7757TR Datasheet

IRF7757TR

Manufacturer Part Number

IRF7757TR

Description

HEXFET TSSOP-8

Manufacturer

International Rectifier

Datasheet

1.IRF7757TR.pdf (9 pages)

Specifications of IRF7757TR

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

35 mOhm @ 4.8A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

4.8A

Vgs(th) (max) @ Id

1.2V @ 250µA

Gate Charge (qg) @ Vgs

23nC @ 4.5V

Input Capacitance (ciss) @ Vds

1340pF @ 15V

Power - Max

1.2W

Mounting Type

Surface Mount

Package / Case

8-TSSOP

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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Absolute Maximum Ratings

Thermal Resistance

HEXFET

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

signer with an extremely efficient and reliable device

for battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Description

www.irf.com

@ T

Dual N-Channel MOSFET

Ultra Low On-Resistance

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

Common Drain Configuration

STG

= 70°C

= 25°C

= 70°C

Power MOSFETs from International Rectifier

Maximum Junction-to-Ambient

Drain- Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Parameter

provides the de-

@ 4.5V

4 = G2

1 = S1

2 = G1

3 = S2

20V

DSS

HEXFET

8 = D

7 = D

6 = D

5 = D

DS(on)

-55 to + 150

35@V

40@V

Max.

105

0.76

± 12

4.8

3.9

1.2

9.5

max (m

IRF7757

= 4.5V

= 2.5V

Power MOSFET

TSSOP-8

PD - 94174

4.8A

3.8A

mW/°C

Units

°C/W

°C

05/03/01

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IRF7757TR Summary of contents

Page 1

... Common Drain Configuration Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, signer with an extremely efficient and reliable device for battery and load management ...

Page 2

IRF7757 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 7.5V 5.0V 4.5V 3.5V 3.0V 100 2.5V 2.0V BOTTOM 1.5V 10 1.5V 1 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. ...

Page 4

IRF7757 10000 0V, C iss = rss = oss = Ciss 1000 Coss Crss 100 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0. SINGLE PULSE ...

Page 6

IRF7757 0.05 0. 4.8A 0.03 0.02 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. ...

Page 7

250µA 0.7 0.5 0.3 -75 -50 - Temperature ( °C ) Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com 120 110 100 ...

Page 8

IRF7757 TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF TSSOP-8 Tape and Reel DAT E CODE (YW) ...

Page 9

TSSOP-8 Package Outline This product has been designed and qualified for the consumer market. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. Qualification Standards can ...

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