IRF8915 International Rectifier, IRF8915 Datasheet - Page 4

• Manufacturer Part Number: IRF8915
• Description: MOSFET 2N-CH 20V 8.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8915

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 540pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant
• Other names: *IRF8915

100.00
4
10.00
10000
1000
1.00
0.10
100
10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
0.4
V DS , Drain-to-Source Voltage (V)
T J = 150°C
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
C iss
C oss
C rss
0.6
0.8
T J = 25°C
f = 1 MHZ
10
1.0
1.2
V GS = 0V
1.4
100
1.6
1000
100
0.1
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
0
Fig 6. Typical Gate Charge Vs.
I D = 7.1A
T A = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
1
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
2
V DS = 16V
V DS = 10V
3
10
4
1msec
10msec
100µsec
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5
100
6
1000
7