IRF8915 International Rectifier, IRF8915 Datasheet - Page 4
![MOSFET 2N-CH 20V 8.9A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF8915
Manufacturer Part Number
IRF8915
Description
MOSFET 2N-CH 20V 8.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF8915TR.pdf
(10 pages)
Specifications of IRF8915
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18.3 mOhm @ 8.9A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
7.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
540pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS non-compliant
Other names
*IRF8915
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF8915PBF
Manufacturer:
CYPRESS
Quantity:
24 970
Part Number:
IRF8915PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF8915TRPBF
Manufacturer:
IR
Quantity:
20 000
100.00
4
10.00
10000
1000
1.00
0.10
100
10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
0.4
V DS , Drain-to-Source Voltage (V)
T J = 150°C
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
C iss
C oss
C rss
0.6
0.8
T J = 25°C
f = 1 MHZ
10
1.0
1.2
V GS = 0V
1.4
100
1.6
1000
100
0.1
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
0
Fig 6. Typical Gate Charge Vs.
I D = 7.1A
T A = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
1
V DS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
2
V DS = 16V
V DS = 10V
3
10
4
1msec
10msec
100µsec
www.irf.com
5
100
6
1000
7